STP140NF75 STMicroelectronics, STP140NF75 Datasheet - Page 5

• Manufacturer Part Number: STP140NF75
• Description: MOSFET N-CH 75V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP140NF75

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 218nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Forward Transconductance Gfs (max / Min): 160 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 150A
• Drain Source Voltage Vds: 24V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5894-5; STP140NF75

STB140NF75 - STP140NF75-1 - STP140NF75
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 120A, V
= 120A,
= 35V, T
Figure
Test conditions
21)
j
GS
= 150°C
= 0
Min.
Electrical characteristics
Typ.
115
450
8
Max.
120
480
1.5
Unit
nC
ns
A
A
V
A
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