IRF1407PBF International Rectifier, IRF1407PBF Datasheet
IRF1407PBF
Specifications of IRF1407PBF
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IRF1407PBF Summary of contents
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... CS R Junction-to-Ambient JA www.irf.com G ® Power MOSFETs @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. ––– 0.50 ––– 95485A IRF1407PbF ® HEXFET Power MOSFET 75V DSS R = 0.0078 DS(on 130A† TO-220AB Max. Units 130† ...
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... IRF1407PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 2. Typical Output Characteristics 3 2 175°C 2.0 1.5 1.0 0.5 0.0 -60 -40 11.0 13.0 Fig 4. Normalized On-Resistance IRF1407PbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 130A V = 10V GS -20 ...
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... IRF1407PbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000. 175°C 100.00 10. 25°C 1.00 0.10 0.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6. Typical Gate Charge vs. ...
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... RESPONSE) 0.01 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1407PbF + - d(off Notes: 1. Duty factor Peak ...
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... IRF1407PbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 13b. Gate Charge Test Circuit ...
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... Figure 15, 16). jmax t Average time in avalanche 125 150 175 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1407PbF Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-03 1.0E-02 1.0E-01 . This is validated for jmax jmax · DT 1/2 ( 1.3· ...
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... IRF1407PbF + ‚ - Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent 8 + ƒ Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® For N-channel HEXFET power MOSFETs „ P.W. ...
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... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.07/2010 IRF1407PbF PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 ...