IRF1407PBF International Rectifier, IRF1407PBF Datasheet - Page 8

MOSFET N-CH 75V 130A TO-220AB

IRF1407PBF

Manufacturer Part Number
IRF1407PBF
Description
MOSFET N-CH 75V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF1407PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.8 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
160 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
0.0078 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
74 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
130 A
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0078Ohm
Drain-source On-volt
80V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1407PBF

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IRF1407PbF
8
Re-Applied
Voltage
Reverse
Recovery
Current

+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
For N-channel
DS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
Diode Recovery
5%
Current
HEXFET
dv/dt
Forward Drop
di/dt
®
power MOSFETs
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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