IRF1407PBF International Rectifier, IRF1407PBF Datasheet - Page 5

MOSFET N-CH 75V 130A TO-220AB

IRF1407PBF

Manufacturer Part Number
IRF1407PBF
Description
MOSFET N-CH 75V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF1407PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.8 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
160 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
0.0078 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
74 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
130 A
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0078Ohm
Drain-source On-volt
80V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1407PBF

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0.001
140
120
100
0.01
80
60
40
20
0.1
0
0.00001
1
25
Fig 9. Maximum Drain Current vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
°
150
t , Rectangular Pulse Duration (sec)
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
J
IRF1407PbF
= P
DM
x Z
t / t
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
1
t
f
t
2
+
-
5
1

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