IRF1407PBF International Rectifier, IRF1407PBF Datasheet - Page 7

• Manufacturer Part Number: IRF1407PBF
• Description: MOSFET N-CH 75V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1407PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 130 A
• Gate Charge, Total: 160 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 0.0078 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 150 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 74 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Mounting Style: Through Hole
• Gate Charge Qg: 160 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0078Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1407PBF

www.irf.com
1000
100
400
300
200
100
10
1
1.0E-07
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
0.05
0.10
0.01
vs. Temperature
1.0E-06
75
TOP
BOTTOM 10% Duty Cycle
I D = 78A
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
125
1.0E-05
150
175
tav (sec)
1.0E-04
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E-03
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
IRF1407PbF
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
1.0E-02
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is