STI15NM60ND STMicroelectronics, STI15NM60ND Datasheet - Page 15
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STI15NM60ND
Manufacturer Part Number
STI15NM60ND
Description
MOSFET N-CH 600V 14A I2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STP15NM60ND.pdf
(19 pages)
Specifications of STI15NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
TO-247 Mechanical data
18.50
mm.
5.45
5.50
Typ
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
15/19