IXTH130N20T IXYS, IXTH130N20T Datasheet - Page 3

• Manufacturer Part Number: IXTH130N20T
• Description: MOSFET N-CH 200V 130A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH130N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.016
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 150
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
130
120
110
100
130
120
110
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
0
Fig. 5. R
0.5
0.2
V
GS
40
= 10V
0.4
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.5
DS(on)
0.6
80
vs. Drain Current
2
0.8
Normalized to I
I
D
2.5
120
V
V
- Amperes
@ 150ºC
@ 25ºC
DS
DS
1
V
- Volts
- Volts
3
GS
V
1.2
GS
160
= 10V
3.5
= 10V
8V
7V
1.4
5V
8V
7V
6V
5V
6V
4
D
T
T
200
= 65A Value
J
J
1.6
= 175ºC
= 25ºC
4.5
1.8
5
240
5.5
2
280
2.2
6
280
240
200
160
120
80
40
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
V
Fig. 6. Drain Current vs. Case Temperature
GS
Fig. 4. R
External Lead Current Limit
Fig. 2. Extended Output Characteristics
-25
2
= 10V
-25
V
GS
9V
8V
= 10V
4
0
0
DS(on)
vs. Junction Temperature
7V
6V
5V
T
C
6
T
- Degrees Centigrade
J
25
25
- Degrees Centigrade
Normalized to I
8
V
@ 25ºC
50
DS
50
10
- Volts
75
75
12
I
D
IXTH130N20T
= 130A
100
100
D
14
= 65A Value
125
125
I
16
D
= 65A
150
150
18
175
175
20