STF12NM50N STMicroelectronics, STF12NM50N Datasheet - Page 5

• Manufacturer Part Number: STF12NM50N
• Description: MOSFET N-CH 500V 11A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF12NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 50V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4804-5

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100 A/µs,
(see Figure 18)
I
di/dt = 100 A/µs,
V
(see Figure 18)
V
R
(see Figure 16)
SD
SD
SD
DD
DD
G
=4.7 Ω, V
=11 A, V
=11 A, V
=11 A,
Test conditions
Test conditions
=100 V, Tj=150 °C
=250 V, I
GS
DD
GS
D
= 5.5 A,
=0
=100 V
=10 V
Min
Min
Electrical characteristics
Typ.
Typ.
340
420
15
15
60
14
3.5
20
20
4
Max
Max
1.3
11
44
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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