IXFC13N50 IXYS, IXFC13N50 Datasheet
IXFC13N50
Manufacturer Part Number
IXFC13N50
Description
MOSFET N-CH 500V 12A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFC13N50.pdf
(2 pages)
Specifications of IXFC13N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
139
Rthjc, Max, (ºc/w)
0.90
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS220
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low t
© 2003 IXYS All rights reserved
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
Weight
DM
GSS
DSS
D25
AR
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
D
DSS
DS(on)
DSS
Test Conditions
V
V
V
V
V
Notes 1, 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
V
S
C
C
C
C
C
GS
DS
GS
DS
J
J
J
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
rr
TM
, HDMOS
GS
, di/dt ≤ 100 A/µs, V
, I
D
D
MOSFET
DC
TM
= 250 µA
DSS
D
= 2.5 mA
G
, V
= I
= 2 Ω
DS
T
= 0
TM
GS
Family
ADVANCED TECHNICAL INFORMATION
= 1 MΩ
DD
T
T
(T
≤ V
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
min.
500
IXFC13N50
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
500
500
±20
±30
140
150
300
12
48
13
18
5
3
max.
±100
200
0.4
4
1 mA
V/ns
mJ
µA
°C
°C
°C
°C
W
nA
Ω
A
A
V
V
V
V
V
V
A
g
Features
Applications
Advantages
See IXFH13N50 data sheet for
characteristic curves
ISOPLUS 220
G = Gate
S = Source
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
V
I
R
t
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
D25
rr
DSS
DS(on)
G
DS (on)
D
S
HDMOS
TM
= 500 V
= 12 A
= 0.4 Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
D = Drain
Isolated back surface*
TM
process
DS98756(7/03)
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IXFC13N50 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS DS(on Notes 1, 2 © 2003 IXYS All rights reserved ADVANCED TECHNICAL INFORMATION IXFC13N50 Family Maximum Ratings 500 = 1 MΩ 500 GS ±20 ± ≤ DSS 140 -55 ... +150 150 -55 ... +150 300 3 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ test current 6. See IXFH13N50 data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...