IXFV110N10PS IXYS, IXFV110N10PS Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFV110N10PS
Manufacturer Part Number
IXFV110N10PS
Description
MOSFET N-CH 100V 110A PLUS220-S
Specifications of IXFV110N10PS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3550pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.015
Ciss, Typ, (pf)
3550
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
480
Rthjc, Max, (ºc/w)
0.31
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting Force
TO-247
PLUS220
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(TO-247)
(PLUS220)
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
JM
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
,
100
Min.
11..65 / 2.5..15
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
110
250
480
175
300
260
1.0
75
60
40
10
6
4
±100
250
Max.
5.0
25
15
V/ns
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
TO-247 (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV...S)
Features
l
l
l
l
Advantages
l
l
l
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
G = Gate
S = Source
G
G
D25
rr
DS(on)
DSS
D
D
G
S
S
S
= 100 V
= 110 A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 150 ns
D = Drain
TAB = Drain
15 mΩ Ω Ω Ω Ω
D (TAB)
DS99212E(01/06)
(TAB)
D (TAB)
Related parts for IXFV110N10PS
IXFV110N10PS Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 110N10P IXFV 110N10P IXFV 110N10PS Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 110 75 250 1.0 ≤ DSS 480 -55 ...
... A, -di/dt = 100 A/µ PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... Value vs. Drain Current 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1 15V GS 1.2 1 0.8 0 100 125 150 175 200 225 250 I - Amperes D © 2006 IXYS All rights reserved º C 220 200 180 160 140 8V 120 100 1.2 1.4 1.6 1.8 2 º C 2.4 2.2 1 ...
... T = 150 º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 70 º º º 150 1.4 1.6 1.8 2 1000 C iss 100 C oss C rss 10 25 ...
... © 2006 IXYS All rights reserved illis IXFH 110N10P IXFV110N10P IXFV 110N10PS ...
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