IXFV14N80P IXYS, IXFV14N80P Datasheet - Page 2

• Manufacturer Part Number: IXFV14N80P
• Description: MOSFET N-CH 800V 14A PLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFV14N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: PLUS-220
• Resistance Drain-source Rds (on): 0.7 Ohms
• Continuous Drain Current: 14 A
• Power Dissipation: 400 W
• Mounting Style: Through Hole
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.72
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 61
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: PLUS220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
I
IXYS reserves the right to change limits, test conditions, and dimensions.
d(on)
r
d(off)
f
rr
RM
fs
PLUS220SMD (IXFV_S) Outline
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
(TO-247, TO-3P)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/μs
F
F
V
DS
GS
GS
GS
GS
G
= I
= 25A,
R
= 5 Ω (External)
= 20 V; I
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
= 100V
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= I
(T
(T
D25
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
Min.
Min.
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
5,237,481
5,381,025
5,486,715
8
Characteristic Values
Characteristic Values
3900
Typ.
Typ.
0.21
250
15
19
26
29
62
27
61
18
20
0.4
6,162,665
6,259,123 B1
6,306,728 B1
5
0.31 °C/W
Max.
Max.
250
1.5
14
40
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
A
pF
pF
pF
ns
ns
ns
ns
μC
IXFH 14N80P IXFQ 14N80P
ns
S
A
A
V
TO-268 (IXFT) Outline
TO-247 (IXFH) Outline
6,683,344
6,710,405 B2 6,759,692
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
6,727,585
6,771,478 B2 7,071,537
.4
3 - Source
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216