IXTV22N60P IXYS, IXTV22N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTV22N60P
Manufacturer Part Number
IXTV22N60P
Description
MOSFET N-CH 600V 22A PLUS220
Specifications of IXTV22N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
PLUS-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
62
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
BV
V
I
I
R
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
GSS
DSS
D25
AR
DM
GS(th)
DS(on)
AR
AS
J
JM
stg
L
SOLD
C
© 2005 IXYS All rights reserved
DSS
DGR
GS
GSM
D
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-3P
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P)
(PLUS 220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
JM
,
600
Min.
3.0
11...65/2.5...15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
400
150
300
260
1.0
5.0
22
66
22
40
10
6
±100
250
350
Max.
5.5
25
V/ns
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
g
TO-3P (IXTQ)
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DS (on)
DSS
G
G = Gate
S = Source
D
D
G
S
S
S
= 600
=
≤ ≤ ≤ ≤ ≤ 350 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
22
DS99250E(12/05)
D (TAB)
D (TAB)
(TAB)
A
V
Related parts for IXTV22N60P
IXTV22N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.0 ≤ DSS 400 -55 ... +150 150 -55 ...
... A/µ 100V PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2005 IXYS All rights reserved 45 = 10V 7. 3.4 3.1 2.8 2.5 2.2 6.5V 1.9 1.6 6V 1.3 1 5.5V 0 º ...
... T = 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.9 1 1.1 100 C iss C oss IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Fig. 8. Trans conductance º ...
... Fig . © 2005 IXYS All rights reserved millis IXTQ 22N60P IXTV 22N60P IXTV 22N60PS ...
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