STW18NM60N STMicroelectronics, STW18NM60N Datasheet - Page 5
STW18NM60N
Manufacturer Part Number
STW18NM60N
Description
MOSFET N-CH 600V 13A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STW18NM60N.pdf
(14 pages)
Specifications of STW18NM60N
Package / Case
TO-247
Mounting Type
Through Hole
Power - Max
110W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
13A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
285 mOhm @ 6.5A, 10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW18NM60N
Manufacturer:
ST
Quantity:
20 000
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
RRM
RRM
SD
I
Q
Q
SD
t
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15868 Rev 1
I
I
V
(see Figure 4)
V
di/dt =100 A/µs, I
Tj = 150°C
V
R
(see Figure 2)
SD
SD
DD
DD
DD
G
=13 A, di/dt =100 A/µs,
= 13 A, V
= 4.7 Ω, V
= 60 V
= 60 V
= 300 V, I
Test conditions
Test conditions
(see Figure 4)
GS
GS
D
=0
= 13 A,
SD
= 10 V
= 13 A
Electrical characteristics
Min.
Min. Typ. Max. Unit
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max.
TBD
13
52
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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