IXFP6N120P IXYS, IXFP6N120P Datasheet - Page 4

• Manufacturer Part Number: IXFP6N120P
• Description: MOSFET N-CH 1200V 6A TO-220AB
• Manufacturer: IXYS
• Series: Polar™ HiPerFET™r

Specifications of IXFP6N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 2.4
• Ciss, Typ, (pf): 2830
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 250
• Rthjc, Max, (ºc/w): 0.5
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
18
16
14
12
10
10
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
0.2
3.0
0
f
0.3
= 1 MHz
3.5
5
0.4
Fig. 9. Forward Voltage Drop of
4.0
10
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
15
Intrinsic Diode
0.6
T
V
V
V
J
SD
GS
DS
= 125ºC
- Volts
T
- Volts
- Volts
J
0.7
5.0
20
= 125ºC
- 40ºC
25ºC
0.8
5.5
25
C oss
C rss
C iss
0.9
6.0
30
T
J
1.0
= 25ºC
6.5
35
1.1
1.2
7.0
40
1.000
0.100
0.010
0.001
11
10
10
0.00001
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
10
1
= 3A
= 10mA
= 600V
0.0001
20
2
IXFA6N120P IXFP6N120P
Fig. 8. Transconductance
30
3
0.001
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
G
40
4
I
- NanoCoulombs
D
- Amperes
0.01
50
5
60
6
T
J
= - 40ºC
0.1
IXFH6N120P
70
125ºC
25ºC
7
IXYS REF: F_6N120P(6C)10-02-09
80
8
1
90
9
100
10
10