IXFH150N17T IXYS, IXFH150N17T Datasheet - Page 4

• Manufacturer Part Number: IXFH150N17T
• Description: MOSFET N-CH 175V 150A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXFH150N17T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 175V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 5V @ 3mA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 175
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9800
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
300
270
240
210
180
150
120
100
80
60
40
20
90
60
30
10
0
0
3.0
0.4
0
f = 1 MHz
0.5
5
3.5
Fig. 9. Forward Voltage Drop of
0.6
T
10
J
Fig. 7. Input Admittance
4.0
= 150ºC
Fig. 11. Capacitance
0.7
Intrinsic Diode
15
4.5
V
V
V
0.8
T
SD
DS
GS
J
= 150ºC
- Volts
20
- Volts
- 40ºC
- Volts
25ºC
C iss
C oss
C rss
0.9
5.0
T
J
25
= 25ºC
1.0
5.5
30
1.1
6.0
35
1.2
1.3
6.5
40
1.000
0.100
0.010
0.001
160
140
120
100
80
60
40
20
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
20
20
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 85V
40
40
Fig. 8. Transconductance
T
J
= - 40ºC
Fig. 10. Gate Charge
0.001
Pulse Width - Seconds
Q
60
60
I
G
D
Impedance
- NanoCoulombs
- Amperes
25ºC
IXFH150N17T
0.01
80
80
150ºC
100
100
0.1
120
120
IXYS REF: T_150N17T(8W)12-02-08-A
1
140
140
160
160
10