IXFH16N80P IXYS, IXFH16N80P Datasheet - Page 5

• Manufacturer Part Number: IXFH16N80P
• Description: MOSFET N-CH 800V 16A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH16N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 16
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 460
• Rthjc, Max, (ºc/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-247 AD (IXFH) Outline
PLUS220SMD (IXFV_S) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
1
4.7
2.2
2.2
1.0
Millimeter
.4
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
3
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
TO-268 (IXFT) Outline
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IXFV 26N60P IXFV 26N60PS
PLUS220 (IXFV) Outline
IXFT 26N60P