IXTC26N50P IXYS, IXTC26N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTC26N50P
Manufacturer Part Number
IXTC26N50P
Description
MOSFET N-CH 500V 15A ISOPLUS220
Specifications of IXTC26N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.26
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
65
Trr, Typ, (ns)
400
Pd, (w)
130
Rthjc, Max, (k/w)
0.95
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
ISOPLUS220
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
C
GS(th)
DS(on)
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
TM
G
= 13A
= 4 Ω
DS
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTC 26N50P
,
500
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
500
500
±30
±40
130
150
300
1.0
15
78
26
40
10
2
±100
250
260
Max.
5.5
25
V/ns
N/lb
m Ω
V~
mJ
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
ISOPLUS220
G = Gate
S = Source
Features
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
V
I
R
D25
G
DSS
DS(on)
D
S
E153432
TM
= 500
= 15
≤ ≤ ≤ ≤ ≤ 260 mΩ Ω Ω Ω Ω
(IXTC)
D = Drain
Isolated Tab
DS99227E(10/05 )
A
V
Related parts for IXTC26N50P
IXTC26N50P Summary of contents
... ± GSS DSS DS DSS 13A DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTC 26N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.0 ≤ DSS 130 -55 ... +150 150 -55 ... +150 300 2500 11..65/2.5..15 2 Characteristic Values Min ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ 3600 ...
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.1 = 10V 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 -50 = 13A Value 125º 25ºC ...
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 100 IXTC 26N50P Fig ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXTC 26N50P 1 10 IXYS REF: T_26N50P (6J) 12-06-05-A ...
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