STP75NF20 STMicroelectronics, STP75NF20 Datasheet - Page 4
![MOSFET N-CH 200V 75A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP75NF20
Manufacturer Part Number
STP75NF20
Description
MOSFET N-CH 200V 75A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STW75NF20.pdf
(16 pages)
Specifications of STP75NF20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
34 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
3260pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
34mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.034 Ohms
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A to 75 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5958-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP75NF20
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP75NF20
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
Q
fs
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 16)
V
R
(see Figure 15)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DD
G
DS
DS
DS
DS
GS
= 1mA, V
= 4.7Ω , V
= 10V
= 160V, I
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
=0
= 100V, I
= Max rating,
= Max rating @125°C
= ± 20V
Test conditions
Test conditions
Test conditions
GS
, I
,
I
D
GS
D
D
GS
STB75NF20 - STP75NF20 - STW75NF20
D
= 37A
= 37A
D
= 250µA
=75A,
= 0
= 10V,
= 37A
Min.
Min.
Min.
200
2
0.028
3260
Typ.
Typ.
Typ.
640
110
40
84
18
34
53
33
75
29
3
Max.
0.034
Max.
Max.
±100
10
1
4
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω