IXFT14N80P IXYS, IXFT14N80P Datasheet - Page 3

• Manufacturer Part Number: IXFT14N80P
• Description: MOSFET N-CH 800V 14A TO-268
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFT14N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Resistance Drain-source Rds (on): 0.7 Ohms
• Continuous Drain Current: 14 A
• Power Dissipation: 400 W
• Mounting Style: SMD/SMT
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.72
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 61
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
2
1
0
0
0
Fig. 5. R
V
2
1
GS
= 10V
4
4
2
DS(on)
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
6
3
8
8
Normalized to I
4
Drain Current
I
10
V
D
V
DS
DS
- Amperes
5
@ 125ºC
@ 25ºC
12
12
- Volts
- Volts
6
V
14
GS
T
16
7
J
= 10V
16
= 125ºC
5V
D
7V
6V
V
GS
8
= 7A Value vs.
18
= 10V
20
T
9
6V
5V
20
J
= 25ºC
10
22
24
11
24
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
12
26
28
27
24
21
18
15
12
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
16
14
12
10
9
6
3
0
1
8
6
4
2
0
0
-50
-50
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
3
GS
-25
-25
Fig. 6. Maximum Drain Current vs.
= 10V
IXFH 14N80P IXFQ 14N80P
6
DS(on)
0
0
T
Junction Temperature
J
9
T
Case Temperature
- Degrees Centigrade
C
Normalized to I
- Degrees Centigrade
25
25
V
12
DS
@ 25ºC
- Volts
15
I
50
50
D
= 14A
V
GS
18
= 10V
75
75
D
6V
7V
5V
= 7A Value vs.
21
I
D
100
100
= 7A
24
125
125
27
150
150
30