IXFH20N80P IXYS, IXFH20N80P Datasheet - Page 2

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IXFH20N80P

Manufacturer Part Number
IXFH20N80P
Description
MOSFET N-CH 800V 20A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH20N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
4685pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.52 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.52
Ciss, Typ, (pf)
4685
Qg, Typ, (nc)
86
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH20N80P
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
SM
I
d(on)
d(off)
f
S
r
rr
RM
fs
thJC
SD
iss
oss
rss
g(on)
gs
gd
thCS
RM
4,835,592
4,850,072
4,881,106
Test Conditions
V
V
V
R
V
(TO-247, PLUS220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
GS
GS
GS
GS
R
DS
G
= I
= 25A, -di/dt = 100 A/µs
= 100V; V
4,931,844
5,017,508
5,034,796
= 0 V
S
= 20 V; I
= 10 V, V
= 2 Ω (External)
= 10 V, V
, V
= 0 V, V
GS
= 0 V,
5,049,961
5,063,307
5,187,117
GS
D
DS
DS
DS
= 10 A, pulse test
= 0 V
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
5,237,481
5,381,025
5,486,715
DSS
DSS
, I
, I
D
D
= 10 A
(T
(T
= 10 A
6,162,665
6,259,123 B1
6,306,728 B1
J
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
IXFV 20N80P
6,404,065 B1
6,534,343
6,583,505
IXFH 20N80P
Min.
Min.
Characteristic Values
14
Characteristic Values
4685
Typ. Max.
Typ.
0.21
356
0.8
6.0
23
26
30
24
85
24
86
27
24
6,683,344
6,710,405B2
6,710,463
0.25
Max.
250
1.5
20
50
°C/W
°C/W
6,727,585
6,759,692
6,771,478 B2
nC
nC
nC
µC
IXFV 20N80PS
pF
pF
pF
n s
n s
ns
ns
ns
S
A
A
V
A
IXFT 20N80P

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