STP150NF55 STMicroelectronics, STP150NF55 Datasheet - Page 3

MOSFET N-CH 55V 120A TO-220

STP150NF55

Manufacturer Part Number
STP150NF55
Description
MOSFET N-CH 55V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP150NF55

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6117-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP150NF55
Manufacturer:
PANASONIC
Quantity:
5 000
Part Number:
STP150NF55
Manufacturer:
ST
0
Part Number:
STP150NF55
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP150NF55,P150NF55
Manufacturer:
ST
0
Part Number:
STP150NF55.
Manufacturer:
ST
0
Part Number:
STP150NF55��STP270N4F3,STP1501F
Manufacturer:
ST
0
Part Number:
STP150NF55������
Manufacturer:
ST
0
STB150NF55 - STP150NF55 - STW150NF55
1
Electrical ratings
Table 1.
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. for 10 sec. 1.6mm from case
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb
Symbol
dv/dt
SD
E
T
V
I
DM
I
I
V
V
AS
T
P
J
D
D
DGR
≤ 120A, di/dt ≤ 200A/µs, V
T
DS
GS
stg
tot
(1)
(1)
j
(2)
(4)
(3)
j
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
= 25 °C, I
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
(1)
D
= 60A, V
DD
≤ V
DD
(BR)DSS
Parameter
= 30V
C
GS
= 25°C
, Tj ≤ T
GS
= 20 kΩ)
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
62.5
see
Figure 15
-55 to 175
D
Value
± 20
2
120
106
480
300
850
300
0.5
55
55
PAK
--
2
8
and
Figure 16
Electrical ratings
TO-247
50
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C/W
°C
3/19

Related parts for STP150NF55