IXTK82N25P IXYS, IXTK82N25P Datasheet - Page 3

• Manufacturer Part Number: IXTK82N25P
• Description: MOSFET N-CH 250V 82A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK82N25P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 82A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 142nC @ 10V
• Input Capacitance (ciss) @ Vds: 4800pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 82 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 82
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): 4800
• Qg, Typ, (nc): 142
• Trr, Typ, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
1
0
0
0
V
20
0.5
GS
1
Fig. 3. Output Char acte r is tics
Fig. 5. R
Fig. 1. Output Characte r is tics
= 10V
40
1
2
0.5 I
V
60
V
GS
GS
DS(on)
V
1.5
D25
I
D
= 10V
3
DS
V
80
= 10V
@ 125
- A mperes
9V
8V
DS
@ 25
9V
8V
V alue vs . I
- V olts
7V
6V
5V
Nor m alize d to
100 120 140 160 180 200
- V olts
6V
2
4
7V
º
º
T
C
C
J
2.5
= 125ºC
5
D
T
J
3
6
= 25ºC
3.5
7
4
8
200
180
160
140
120
100
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
90
80
70
60
50
40
30
20
10
0
2
1
0
-50
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Externak Lead C urrent Lim it
Fig. 4. R
V alue vs . Junction Te m pe ratur e
V
2
-25
-25
GS
IXTK 82N25P IXTQ 82N25P
Fig. 6. Dr ain Cur re nt vs . Cas e
= 10V
4
T
0
0
DS(on
T
C
J
- Degrees Centigrade
6
- Degrees Centigrade
Te m pe r ature
25
25
)
Norm alize d to 0.5 I
@ 25
8
V
I
D
DS
= 82A
10
50
50
- V olts
º
C
V
GS
12
75
75
IXTT 82N25P
= 10V
I
D
14
7V
6V
9V
8V
= 41A
100
100
16
D25
125
125
18
150
150
20