IXFT120N15P IXYS, IXFT120N15P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFT120N15P
Manufacturer Part Number
IXFT120N15P
Description
MOSFET N-CH 150V 120A TO-268
Specifications of IXFT120N15P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
4900pF @ 25V
Power - Max
600W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.016
Ciss, Typ, (pf)
4900
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
DSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 175 C
= 25 C to 175 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
TM
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
, di/dt
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250 A
, V
G
= 0.5 I
100 A/ s, V
= 4
DS
= 0
D25
(TO-3P)
GS
= 1 M
DD
T
J
= 175 C
V
DSS
IXFH 120N15P
IXFT 120N15P
JM
,
2 %
150
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
150
150
120
260
600
175
300
260
2.0
6.0
5.0
20
30
75
60
60
10
100
500
Max.
5.0
25
16
V/ns
m
mJ
nA
W
C
C
C
C
C
V
V
V
V
A
A
A
A
V
V
A
A
g
g
J
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
V
I
R
t
D25
rr
D
DS(on)
DSS
S
G
= 150
= 120
S
D = Drain
TAB = Drain
16 m
200 ns
DS99210E(12/05)
D (TAB)
D (TAB)
A
V
Related parts for IXFT120N15P
IXFT120N15P Summary of contents
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2006 IXYS All rights reserved IXFH 120N15P IXFT 120N15P Maximum Ratings 150 = 1 M 150 120 75 260 2 DSS 600 -55 ... +175 175 -55 ... +150 300 260 1.13/10 Nm/lb.in. 6.0 5.0 Characteristic Values Min ...
... Pulse test, t 300 s, duty cycle -di/dt = 100 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values ( unless otherwise specified) J Min. Typ. , pulse test 40 60 4900 ...
... D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 4 3 15V GS 1 120 150 180 210 240 270 300 I - Amperes D © 2006 IXYS All rights reserved º C 280 240 200 8V 160 7V 120 1.5 2 2.5 º C 2.8 = 10V 2 ...
... T = 150 º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10,000 1,000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 7 1.2 1.4 1.6 1.8 1000 C iss 100 C oss C rss IXFH 120N15P IXFT 120N15P Fig ...
... © 2006 IXYS All rights reserved illis IXFH 120N15P IXFT 120N15P ...
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