IXTH41N25 IXYS, IXTH41N25 Datasheet
IXTH41N25
Specifications of IXTH41N25
Related parts for IXTH41N25
IXTH41N25 Summary of contents
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... ± GSS DSS DS DSS 15A DS(on Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved IXTH 41N25 Maximum ratings 250 = 1.0 MΩ 250 ±20 ±30 41 164 1.0 ≤ DSS 300 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values Min ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ 0 -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. , pulse test 20 28 3200 ...
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... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value Amperes D © 2003 IXYS All rights reserved 6V 5V 2 D25 25º 25º IXTH 41N25 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. DS(on) D25 Junction Temperature 2 ...
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... 0.4 0.6 0 Volts SD Fig. 11. Capacitance 1 0000 000 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5 25º iss C oss C rss 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...