IXFC20N80P IXYS, IXFC20N80P Datasheet
IXFC20N80P
Manufacturer Part Number
IXFC20N80P
Description
MOSFET N-CH 800V 11A ISOPLUS220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFC20N80P.pdf
(4 pages)
Specifications of IXFC20N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
4680pF @ 25V
Power - Max
166W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.57 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
166 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
0.57
Ciss, Typ, (pf)
4685
Qg, Typ, (nc)
86
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
160
Rthjc, Max, (ºc/w)
0.8
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
C
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab
Mounting Force
ISOPLUS220
ISOPLUS247
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
HiPerFET
, I
D
D
D
= 250 μA
= 4 mA
= 10 A
G
DS
= 3 Ω
= 0 V
(IXFC)
(IXFR)
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
IXFC 20N80P
IXFR 20N80P
JM
,
20..120 / 4.5..25
800
Min.
3.0
11..65 / 2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
800
800
±30
±40
166
150
300
1.0
11
60
10
30
10
2500
2
5
±100
500
Max.
5.0
25
1
V/ns
N/lb
N/lb
mΩ
mA
mJ
nA
μA
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
ISOPLUS247
ISOPLUS220
Features
Applications
Advantages
G = Gate
S = Source
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
G
V
I
R
t
D25
rr
D
DS(on)
E153432
DSS
S
E153432
TM
TM
= 800
= 10
≤ ≤ ≤ ≤ ≤ 500 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250
(IXFR)
Isolated back
(IXFC)
D = Drain
Isolated back surface
DS99602E(08/06)
surface
ns
A
V
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IXFC20N80P Summary of contents
Page 1
... ± GSS DSS DS DSS DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFC 20N80P IXFR 20N80P Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 1.0 ≤ DSS 166 -55 ... +150 150 -55 ... +150 300 2500 11..65 / 2.5..15 20 ...
Page 2
... I = 20A, -di/dt = 100 A/μ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. Max 4680 ...
Page 3
... olts D S Fig Nor m alize d to DS(on 10A V alue ain Cur 2.6 2 10V GS 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º º C 2.6 = 10V 2.4 7V 2.2 1.8 6V 1.6 1.4 1.2 0.8 5V 0.6 0 º 125 C J º ...
Page 4
... Fig. 9. Source Cur Sour ce -To-Dr ain V oltage º 125 0.4 0.5 0.6 0.7 0 olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5.25 5.5 5. º 0.9 1 1.1 1.2 1.00 0.10 0. ...