IXTA10P50P IXYS, IXTA10P50P Datasheet - Page 4

• Manufacturer Part Number: IXTA10P50P
• Description: MOSFET P-CH 500V 10A TO-263
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTA10P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -500
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 1
• Ciss, Typ, (pf): 2670
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 414
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-10
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-9
-8
-7
-6
-5
-4
-3
-2
-1
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
0
0
-2
Fig. 5. R
V
-1
GS
-2
= -10V
-4
Fig. 1. Output Characteristics
-2
Fig. 3. Output Characteristics
-4
-6
DS(on)
-3
-8
-6
Drain Current
Normalized to I
-10
-4
I
D
V
@ 125ºC
V
@ 25ºC
-8
DS
- Amperes
-12
DS
- Volts
-5
- Volts
-14
V
-10
GS
V
-6
-16
GS
= -10V
T
- 7V
J
= -10V
- 5V
-12
- 6V
= 125ºC
- 7V
-18
-7
D
T
- 6V
- 5V
J
= - 5A vs.
= 25ºC
-20
-14
-8
-22
-16
-9
-24
-18
-26
-10
-26
-24
-22
-20
-18
-16
-14
-12
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-8
-6
-4
-2
0
0
-50
-50
0
V
Fig. 4. R
Fig. 2. Extended Output Characteristics
GS
-25
-25
-4
= -10V
Fig. 6. Maximum Drain Current vs.
-8
0
0
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
DS(on)
Junction Temperature
T
J
T
- Degrees Centigrade
Case Temperature
J
- Degrees Centigrade
-12
25
25
Normalized to I
V
@ 25ºC
DS
I
-16
50
50
- Volts
D
= -10A
V
GS
-20
75
75
= -10V
- 8V
- 7V
- 6V
- 5V
D
= - 5A vs.
100
-24
I
100
D
= - 5A
125
-28
125
150
-32
150