STB32N65M5 STMicroelectronics, STB32N65M5 Datasheet - Page 4

• Manufacturer Part Number: STB32N65M5
• Description: MOSFET N-CH 650V 24A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.119 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 15 A, 24 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10564-2

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss eq.
oss
oss
iss
rss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15316 Rev 3
DSS
V
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
GS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
DS
DS
, I
20)
GS
D
D
= 0 to 520 V
= 0 to 520 V
D
= 250 µA
= 12 A
= 0
= 12 A,
C
=125 °C
Min.
Min.
650
3
-
-
-
-
-
STB/F/I/P/W32N65M5
0.095
3320
Typ.
Typ.
210
357
75
72
17
29
4
5
2
0.119
Max.
Max.
100
100
1
5
-
-
-
-
-
oss
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
V
V
Ω
Ω