IXFJ13N50 IXYS, IXFJ13N50 Datasheet - Page 4

• Manufacturer Part Number: IXFJ13N50
• Description: MOSFET N-CH 500V 13A TO-220
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFJ13N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 13
• Rds(on), Max, Tj=25°c, (?): 0.4
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 179
• Rthjc, Max, (ºc/w): 0.70
• Package Style: TO-268 (I3 - PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
4000
3500
3000
2500
2000
1500
1000
1.00
0.10
0.01
500
Figure 9. Source Current vs. Source
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
0
0
D = 0.1
D=0.01
D = 0.2
D = 0.05
D=0.02
V
I
I
D = 0.5
D
G
DS
= 6.5A
= 10mA
Figure 7. Gate Charge
= 250V
to Drain Voltage
Single Pulse
5
Gate Charge - nCoulombs
25
0.0001
10
V
DS
C
C
C
iss
oss
rss
50
- Volts
15
Figure 11. Transient Thermal Resistance
75
20
0.001
100
25
Time - Seconds
0.01
100
0.1
10
25
20
15
10
Figure10. Forward Bias Safe Operating
Area
1
5
0
0.00
1
Limited by R
Figure 8. Capacitance Curves
0.1
0.25
DS(on)
T
0.50
J
= 125°C
10
V
V
DS
SD
0.75
- Volts
- Volt
1
T
J
IXFJ 13N50
1.00
= 25°C
100
1.25
1.50
10
10µs
100µs
100ms
1ms
10ms
4 - 4