IXTT50P10 IXYS, IXTT50P10 Datasheet - Page 3
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IXTT50P10
Manufacturer Part Number
IXTT50P10
Description
MOSFET P-CH 100V 50A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH50P10.pdf
(4 pages)
Specifications of IXTT50P10
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 50 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-50
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
4350
Qg, Typ, (nc)
140
Trr, Typ, (ns)
180
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTT50P10
Manufacturer:
IXYS
Quantity:
18 000
© 2008 IXYS CORPORATION, All rights reserved
-50
-45
-40
-35
-30
-25
-20
-15
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
-5
0
0
0.0
0.0
0
V
Fig. 5. R
GS
-0.5
= - 10V
-0.4
-25
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
-1.0
DS(on)
-0.8
V
-1.5
V
I
Value vs. I
GS
-50
GS
V
V
D
Normalized to 0.5 I
@ 125ºC
D S
D S
@ 25ºC
= -10V
- Amperes
= -10V
- 9V
- 9V
-1.2
-2.0
- Volts
- Volts
-75
-2.5
D
-1.6
-3.0
T
-100
J
- 7V
- 6V
- 5V
= 125ºC
- 8V
-2.0
T
D25
J
- 8V
- 7V
- 6V
- 5V
-3.5
= 25ºC
-125
-2.4
-4.0
-140
-120
-100
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-80
-60
-40
-20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-5
0
0
-50
-50
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-2
-25
-25
V
= - 10V
GS
Fig. 6. Drain Current vs. Case
= -10V
-4
T
vs. Junction Temperature
DS(on)
0
C
0
T
- Degrees Centigrade
-6
J
- Degrees Centigrade
Normalized to 0.5 I
25
Temperature
25
I
-8
D
V
= - 50A
@ 25ºC
D S
50
-10
50
- 9V
- 8V
- 7V
- 6V
- 5V
- Volts
-12
75
75
IXTH50P10
IXTT50P10
-14
100
100
I
D
D25
= - 25A
-16
Value
125
125
-18
150
150
-20