IXFH24N50Q IXYS, IXFH24N50Q Datasheet - Page 3

• Manufacturer Part Number: IXFH24N50Q
• Description: MOSFET N-CH 500V 24A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH24N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.23
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 95
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2003 IXYS All rights reserved
2.8
2.4
2.0
1.6
1.2
0.8
60
50
40
30
20
10
30
25
20
15
10
0
5
0
Fig.1 Output Characteristics @ T
-50
0
Fig.3 R
0
Fig.5 Drain Current vs. Case Temperature
V
T
-25
GS
IXF_24N50Q
J
IXF_26N50Q
10
= 25
= 10V
DS(on)
4
O
T
C
0
J
= 125 o C
20
vs. Drain Current
T
I
D
25
C
V
8
- Amperes
T
- Degrees C
DS
V
J
= 25 o C
GS
30
- Volts
=10V
50
9V
8V
7V
12
75
40
100 125 150
16
50
j
= 25°C
5V
6V
60
20
Fig.2 Output Characteristics @ T
Fig.6 Drain Current vs Gate Source Voltage
2.4
2.0
1.6
1.2
0.8
50
40
30
20
10
50
40
30
20
10
Fig.4 Temperature Dependence of Drain
0
0
0
0
25
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
V
to Source Resistance
T
GS
J
= 125
= 10V
50
4
2
O
I
C
D
= 26A
T
T
J
V
V
J
8
75
- Degrees C
= 125
GS
DS
I
- Volts
- Volts
D
4
= 13A
o
C
100
12
V
GS
=10V
9V
8V
7V
6
j
T
16
= 125°C
125
J
= 25
o
C
5V
6V
150
20
8