IXTT69N30P IXYS, IXTT69N30P Datasheet - Page 2

• Manufacturer Part Number: IXTT69N30P
• Description: MOSFET N-CH 300V 69A TO-268
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTT69N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4960pF @ 25V
• Power - Max: 500W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.049 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 69 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 69
• Rds(on), Max, Tj=25°c, (?): 49
• Ciss, Typ, (pf): 4960
• Qg, Typ, (nc): 156
• Trr, Typ, (ns): 330
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.25
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
T
Q
S
SM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
r
d(off)
f
fs
rr
SD
one or moreof the following U.S. patents:
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
(TO-3P)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A,
= 100 V, V
= 10 V; I
= 4 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
-di/dt = 100 A/µs
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0V
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= I
(T
(T
D25
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
30
Characteristic Values
Characteristic Values
4960
Typ.
Typ.
0.21
760
190
156
250
3.0
48
25
25
75
27
32
79
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.25° C/W
180 nC
200
1.5
69
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTQ 69N30P
IXTT 69N30P