IXFH100N25P IXYS, IXFH100N25P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH100N25P
Manufacturer Part Number
IXFH100N25P
Description
MOSFET N-CH 250V 100A TO-247
Specifications of IXFH100N25P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
© 2006 IXYS All rights reserved
GSS
DSS
AR
AS
J
JM
stg
L
SOLD
DSS
DGR
GS
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
HiPerFET
DSS
, I
D
D
DC
D
= 250 μA
= 4 mA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFH 100N25P
,
250
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
250
250
±20
±30
100
250
600
150
300
260
2.0
5.5
75
60
60
10
±100
500
Max.
5.0
25
27
V/ns
mΩ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
J
g
Features
Advantages
TO-247 (IXFH)
V
I
R
t
D25
rr
Fast Intrinsic Diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G = Gate
S = Source
G
D
= 250
= 100
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200 ns
S
27 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99344E(03/06)
(TAB)
A
V
Related parts for IXFH100N25P
IXFH100N25P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 100N25P Maximum Ratings 250 = 1 MΩ 250 GS ±20 ±30 100 75 250 2.0 ≤ DSS 600 -55 ... +150 150 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 40 ...
... I V alue D25 3 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 100 125 150 175 200 225 250 mperes D © 2006 IXYS All rights reserved º C 250 225 200 175 150 125 100 2.5 3 3.5 º C 2.8 2.6 2.4 2.2 7V 1.8 1 ...
... T = 125º 0.4 0.6 0 Volts SD Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 6 25º 1.2 1.4 1000 C iss 100 C oss C rss IXFH 100N25P Fig. 8. Transconductance -40º 25ºC 60 125º ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXFH 100N25P 100 1000 ...
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