IXKC20N60C IXYS, IXKC20N60C Datasheet

IXKC20N60C

Manufacturer Part Number

IXKC20N60C

Description

MOSFET N-CH 600V 15A ISOPLUS220

Manufacturer

IXYS

Series

CoolMOS™r

Datasheet

1.IXKC20N60C.pdf (4 pages)

Specifications of IXKC20N60C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

190 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

15A

Vgs(th) (max) @ Id

3.9V @ 1mA

Gate Charge (qg) @ Vgs

114nC @ 10V

Input Capacitance (ciss) @ Vds

2400pF @ 25V

Mounting Type

Through Hole

Package / Case

ISOPLUS220™

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

190 mOhms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

15 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

87 nC

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

600

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.190

Ciss, Typ, (pf)

2400

Qg, Typ, (nc)

Trr, Max, (ns)

800

Trr, Typ, (ns)

500

Pd, (w)

125

Rthjc, Max, (k/w)

1.00

Visol, Rms, (v)

2500

Package Style

ISOPLUS220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Lead Free Status / Rohs Status

Details

Current page: 1 of 4
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CoolMOS

Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low R

Ultra low gate charge

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFET

Symbol

DSS

GSS

D25

D90

d(on)

d(off)

GS(th)

DSS

DSon

iss

oss

thJC

DSon

, high V

Conditions

single pulse; I

repetitive;

Conditions

f = 1 MHz

= 21 A; R

= 25°C

= 90°C

= 25°C

= 600 V; V

= 10 V; I

= V

= ± 20 V; V

= 0 V; V

= 0 to 10 V; V

= 13 V; V

™ 1)

; I

DSS

= 1 mA

= 3.3 Ω; T

= 16 A

= 25 V

MOSFET

= 380 V

Power MOSFET

= 10 A; T

= 20 A; T

= 0 V

= 350 V; I

= 125°C

= 25°C

= 150°C

= 20 A

= 25°C, unless otherwise speciﬁ ed)

min.

2.1

Characteristic Values

2400

Maximum Ratings

typ.

160

780

4.5

max.

± 20

10.5

600

690

190

250

100

114

3.9

K/W

mΩ

µA

ISOPLUS220

Features

• Silicon chip on Direct-Copper-Bond

• CoolMOS

• Enhanced total power density

Applications

• Switched mode power supplies

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

Advantages

• Easy assembly:

• Space savings

• High power density

• High reliability

D25

substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

- low drain to tab capacitance (< 30 pF)

- 3rd generation

- high blocking capability

- lowest resistance

- avalanche rated for unclamped

- low thermal resistance

(SMPS)

no screws or isolation foils required

DSS

DS(on) max

inductive switching (UIS)

due to reduced chip thickness

E72873

CoolMOS

Inﬁ neon Technologies AG.

™ 1)

IXKC 20N60C

power MOSFET

= 600 V

= 15 A

= 190 mΩ

™

is a trademark of

isolated tab

20080523a

1 - 4

Related parts for IXKC20N60C

IXKC20N60C Summary of contents

Page 1

... 380 3.3 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G Maximum Ratings 600 ± 10.5 = 25°C 690 C = 25°C C Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min. typ. ...

Page 2

... RMS leads-to-tab, 50/60 Hz minute ISOL F mounting force C Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min. typ. max. 20 0.9 1 ...

Page 3

... Outline 140 120 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved * Note 25°C J 160 V [V] DS Fig. 2 Typ. output characteristics IXKC 20N60C INCHES MILLIMETERS SYM MIN MAX MIN A ...

Page 4

... Typ. drain-source on-state resistance V [V] SD Fig. 7 Forward characteristic of reverse diode 700 650 140 T [°C] J Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 1 13 [°C] J Fig. 5 Drain-source on-state resistance I = 20.7 A pulsed D ...

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