IXTT10P60 IXYS, IXTT10P60 Datasheet

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IXTT10P60

Manufacturer Part Number
IXTT10P60
Description
MOSFET P-CH 600V 10A TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXTT10P60

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
160
Trr, Typ, (ns)
500
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTT10P60
Manufacturer:
IXYS
Quantity:
124
Standard Power
MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-247
V
V
V
V
V
Test Conditions
TO-268
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±20V, V
= 0.8 •V
= -10V, I
GS
, I
D
D
= - 250μA
D
DSS
= - 250μA
DS
= 0.5 • I
, V
= 0V
GS
(TO-247)
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTH10P60
IXTT10P60
- 600
- 55 ... +150
- 55 ... +150
- 3.0
Characteristic Values
Min.
Maximum Ratings
1.13 / 10
- 600
- 600
- 10
- 40
- 10
±20
±30
300
150
300
260
Typ.
30
4
6
±100 nA
- 5.0
Nm/lb.in.
Max.
- 25 μA
-1 mA
1
mJ
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
A
A
V
g
g
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
International Standard Packages
Low Package Inductance
Rugged Polysilicon Gate Cell
Structure
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
DS(on)
DSS
G
D
≤ ≤ ≤ ≤ ≤
=
=
S
G
D
Tab = Drain
S
- 600V
- 10A
1Ω Ω Ω Ω Ω
D (Tab)
D (Tab)
= Drain
DS98849C(01/10)

Related parts for IXTT10P60

IXTT10P60 Summary of contents

Page 1

... GS(th ±20V GSS 0.8 • DSS DS DSS -10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXTH10P60 IXTT10P60 Maximum Ratings - 600 = 1MΩ - 600 GS ±20 ± 300 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. - 600 - 3 125°C J ...

Page 2

... S 6.15 BSC - 3 V TO-268 (IXTT) Outline ns Terminals Gate 3 - Source 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH10P60 IXTT10P60 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 ...

Page 3

... Fig. 2. Output Characteristics at 125 - -10V T = 125 -9V -8V -7V - -10 - Volts DS Fig vs. T DS(ON) 2 -10V GS 2 -10A D 1.5 1 -5A D 0.5 0.0 - 100 T - Degrees C J Fig. 6. Admittance Curves -12 - 125 -4.5 -5.0 -5.5 -6.0 -6 Volts GS IXTH10P60 IXTT10P60 o C -6V -5V -20 J 125 150 o = -40 C -7.0 ...

Page 4

... Crss 200 100 0 -5 -10 -15 -20 - Volts D S Fig. 10. Forward-Bias Safe Operating Area 100 Limit DS(on) 10 150º 25ºC C Single Pulse 0 100 V - Volts Duty Cycle - IXTH10P60 IXTT10P60 f = 1MHz -30 -35 -40 100µs 1ms 10ms 100ms DC - 1000 1 10 IXYS REF: T_10P60(7B)1-08-10 ...

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