STP20NM50FP STMicroelectronics, STP20NM50FP Datasheet - Page 6

• Manufacturer Part Number: STP20NM50FP
• Description: MOSFET N-CH 550V 20A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM50FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5394-5; STP20NM50FP

Electrical characteristics
2.1
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Figure 1.
Figure 3.
Figure 5.
Safe operating area for TO-220/
D²PAK/I²PAK
Electrical characteristics (curves)
Safe operating area for TO-220FP
Output characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Figure 2.
Figure 4.
Figure 6.
Thermal impedance for TO-220/
D²PAK/I²PAK
Thermal impedance for TO-220FP
Transfer characteristics