IXFC60N20 IXYS, IXFC60N20 Datasheet - Page 2

• Manufacturer Part Number: IXFC60N20
• Description: MOSFET N-CH 200V 60A ISOPLUS220
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFC60N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.033
• Ciss, Typ, (pf): 5200
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 139
• Rthjc, Max, (ºc/w): 0.9
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
T
Test Conditions
Test Conditions
F
DS
GS
S
F
D
R
GS
GS
GS
GS
D
D25
T
DS
DS
DS
G
DSS
DSS
J
J
JM
D
T
min.
min.
Characteristic Values
Characteristic Values
typ.
typ.
max.
max.
ISOPLUS220 OUTLINE
IXFC 60N20