IXFH23N60Q IXYS, IXFH23N60Q Datasheet
IXFH23N60Q
Specifications of IXFH23N60Q
Related parts for IXFH23N60Q
IXFH23N60Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 23N60Q IXFT 23N60Q Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. ...
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... -di/dt = 100 A/µ Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. , pulse test 10 20 ...
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... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg 7 2 7 Volts DS Fig Normalized to I DS(on) Value Amperes D © 2003 IXYS All rights reserved D25 25º 25º IXFH 23N60Q IXFT 23N60Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) D25 ...
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... C iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 ...