STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 5

• Manufacturer Part Number: STP4N150
• Description: MOSFET N-CH 1500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP4N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5091-5

STP4N150 - STW4N150
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
A/µs
V
(see Figure 18)
I
A/µs
V
(see Figure 18)
SD
SD
SD
DD
DD
= 4 A, V
= 4 A, di/dt = 100
= 4 A, di/dt = 100
Test conditions
= 45V
= 45V, T
GS
j
= 150°C
= 0
Electrical characteristics
Min.
Typ.
12.6
510
615
12
3
4
Max.
12
4
2
ns
µC
A
ns
µC
A
Unit
A
A
V
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