IXFH88N30P IXYS, IXFH88N30P Datasheet - Page 4

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IXFH88N30P

Manufacturer Part Number
IXFH88N30P
Description
MOSFET N-CH 300V 88A TO-247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFH88N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
88 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH88N30P
Manufacturer:
IXYS
Quantity:
15 500
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
160
140
120
100
240
200
160
120
100
80
40
80
60
40
20
0
0
3.0
0.3
0
f
0.4
= 1 MHz
3.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.0
10
0.6
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
0.7
= 125ºC
15
5.0
V
V
V
GS
SD
DS
T
J
0.8
= 125ºC
- Volts
- Volts
- Volts
- 40ºC
5.5
20
25ºC
0.9
T
J
6.0
= 25ºC
25
1.0
C oss
C rss
C iss
6.5
1.1
30
7.0
1.2
35
7.5
1.3
1.4
8.0
40
1,000
100
100
10
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
1
0
0
1
0
V
I
I
D
G
DS
20
= 44A
= 10mA
T
T
Single Pulse
20
Fig. 12. Forward-Bias Safe Operating Area
= 150V
J
C
= 150ºC
= 25ºC
40
40
IXFT88N30P IXFH88N30P
R
60
Fig. 8. Transconductance
DS(on)
DC
10ms
10
60
Fig. 10. Gate Charge
Q
Limit
I
80
D
G
- Amperes
- NanoCoulombs
1ms
V
80
DS
100
T
- Volts
J
= - 40ºC
100
100µs
125ºC
25ºC
120
IXFK88N30P
100
120
140
25µs
140
160
160
180
1000
180
200

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