IXTH24N50 IXYS, IXTH24N50 Datasheet

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IXTH24N50

Manufacturer Part Number
IXTH24N50
Description
MOSFET N-CH 500V 24A TO-247
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTH24N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
160
Trr, Typ, (ns)
600
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / Rohs Status
 Details
Other names
Q2768977

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH24N50
Manufacturer:
IXYS
Quantity:
1 200
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
V
J
J
C
C
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
21N50
24N50
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 21N50
IXTH / IXTM 24N50
21N50
24N50
21N50
24N50
TO-204 = 18 g, TO-247 = 6 g
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
500
500
300
150
300
20
30
21
24
84
96
max.
0.25
0.23
100
200
4
1
mA
W
nA
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AE (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
500 V
500 V
V
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
21 A 0.25
24 A 0.23
I
D25
TM
G
process
D (TAB)
R
91536F(5/97)
DS(on)
1 - 4

Related parts for IXTH24N50

IXTH24N50 Summary of contents

Page 1

... V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH / IXTM 21N50 IXTH / IXTM 24N50 Maximum Ratings 500 = 1 M 500 21N50 21 24N50 24 21N50 ...

Page 2

... C, unless otherwise specified) J min. typ. 21N50 24N50 21N50 24N50 JM = 100 V 600 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 21N50 IXTH 24N50 IXTM 21N50 IXTM 24N50 TO-247 AD (IXTH) Outline max ...

Page 3

... J 1.5 1.4 1 10V GS 1.2 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 30 24N50 20 21N50 10 0 -50 - Degrees C C © 2000 IXYS All rights reserved 15V GS 75 100 125 150 IXTH 21N50 IXTH 24N50 IXTM 21N50 IXTM 24N50 Fig. 2 Input Admittance 25° ...

Page 4

... Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXTH 21N50 IXTM 21N50 Fig.8 Forward Bias Safe Operating Area 100 Limited 0.1 1 Fig.10 Source Current vs. Source iss ...

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