IXFR70N15 IXYS, IXFR70N15 Datasheet
IXFR70N15
Manufacturer Part Number
IXFR70N15
Description
MOSFET N-CH 150V 67A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR70N15.pdf
(2 pages)
Specifications of IXFR70N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
67
Rds(on), Max, Tj=25°c, (?)
0.028
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFET
ISOPLUS247
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
GS
ISOL
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
External lead (current limit)
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
V
V
Notes 2, 3
V
V
V
Test Conditions
V
S
C
C
C
C
C
C
J
J
J
GS
GS
GS
DS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (MOSFET chip capability)
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V, V
= V
= 10 V, I
= 0 V
TM
DM
GS
, di/dt £ 100 A/ms, V
DSS
, I
Power MOSFETs
D
D
= 250mA
= 4mA
TM
D
= I
G
DS
= 2 W
T
= 0
t = 1 min
GS
= 1 MW
DD
£ V
T
T
(T
J
J
DSS
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
Advanced Technical Information
rr
min.
150
2.0
Characteristic Values
-55 ... +150
-55 ... +150
IXFR 70N15
Maximum Ratings
typ.
2500
150
150
±20
±30
280
250
150
300
1.0
67
70
70
30
5
5
max.
±100 nA
750 mA
28 mW
4.0 V
25 mA
V/ns
mJ
V~
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
J
g
ISOPLUS 247
G = Gate
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(<30pF)
• Low R
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Switching (UIS)
power supplies
V
I
R
t
E153432
D25
rr
DS (on)
DSS
DS(on)
£ 250ns
HDMOS
TM
D = Drain
= 150
= 67
= 28 mW
Isolated backside*
TM
process
98714 (03/27/00)
S = Source
A
V
1 - 2
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IXFR70N15 Summary of contents
Page 1
... GSS DSS DS DSS DS(on Notes 2, 3 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFR 70N15 rr Maximum Ratings 150 = 1 MW 150 GS ±20 ±30 67 280 1.0 £ DSS 250 -55 ... +150 150 -55 ...
Page 2
... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 70 280 1.5 250 0.85 = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFR 70N15 ISOPLUS 247 (IXFR) OUTLINE ...