IXTH30N25 IXYS, IXTH30N25 Datasheet
IXTH30N25
Manufacturer Part Number
IXTH30N25
Description
MOSFET N-CH 250V 30A TO-247
Manufacturer
IXYS
Datasheet
1.IXTH30N25.pdf
(2 pages)
Specifications of IXTH30N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
136nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
-
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
C
C
C
C
C
GS
GS
GS
J
J
J
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 250 A
= 250 A
300 s, duty cycle d
, V
= 15 A
G
DS
= 2
= 0
GS
= 1 M
DD
T
Advance Technical Information
J
(T
= 125 C
V
J
DSS
= 25 C, unless otherwise specified)
2 %
,
JM
250
min.
IXTH 30N25
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
55
1.13/10 Nm/lb.in.
typ.
250
250
120
200
150
300
1.0
20
30
30
30
30
5
6
max.
100
250
25
75 m
4
V/ns
mJ
nA
W
C
C
C
C
A
A
V
V
V
V
A
A
A
g
V
V
J
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
D (cont)
DSS
DS(on)
DS (on)
HDMOS
= 250 V
=
=
TAB = Drain
D = Drain,
TM
75 m
30 A
process
98872 (12/01)
D (TAB)
Related parts for IXTH30N25
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXTH30N25 Summary of contents
Page 1
... GS(th GSS DSS DS DSS DS(on Pulse test, t 300 s, duty cycle d © 2001 IXYS All rights reserved Advance Technical Information IXTH 30N25 Maximum Ratings 250 = 1 M 250 120 1 DSS 200 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min. ...
Page 2
... Test Conditions Repetitive; pulse width limited Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values ( unless otherwise specified) J min. typ. max 3950 510 177 30A 19 DSS 136 , DSS D D25 52 0.65 ...