IXTR200N10P IXYS, IXTR200N10P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTR200N10P
Manufacturer Part Number
IXTR200N10P
Description
MOSFET N-CH 100V 120A ISOPLUS247
Specifications of IXTR200N10P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
100
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated
Fast Recovery Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
DSS
DGR
GS
GSM
AR
AS
D
ISOL
C
GS(th)
DS(on)
J
DSS
= 25° C, unless otherwise specified)
TM
Test Conditions
T
T
T
External lead current limit
T
T
T
T
I
T
T
50/60 Hz, RMS, 1 minute
Mounting Force
Test Conditions
V
V
V
V
V
V
S
V
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
GS
HiPerFET
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
D
= 250 µA
= 500µA
, V
G
= 60 A
= 400A
= 4 Ω
DS
= 0
GS
= 1 MΩ
DD
T
T
J
J
≤ V
= 150° C
= 175° C
IXTR 200N10P
DSS
JM
,
100
Min.
20..120/4.6..20
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
5.5
2500
100
100
±20
±30
120
400
100
300
175
75
60
10
4
5
±100
1000
250
Max.
5.0
8.0
25
Nm/lb
V/ns
m Ω
m Ω
mJ
V~
nA
µA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
Features
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Avalanche voltage rated
Fast recovery intrinsic diode
AC motor control
ISOPLUS 247
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
V
I
R
G = Gate
S = Source
D25
E153432
DS(on)
DSS
TM
= 100 V
= 120 A
≤ ≤ ≤ ≤ ≤
(IXTR)
ISOLATED TAB
D = Drain
DS99365E(03/06)
8 mΩ Ω Ω Ω Ω
Related parts for IXTR200N10P
IXTR200N10P Summary of contents
... GSS DSS DS DSS DS(on 400A GS D © 2006 IXYS All rights reserved IXTR 200N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 120 75 400 JM 60 100 4 ≤ DSS 300 -55 ... +175 175 -55 ... +150 2500 20..120/4.6..20 5 Characteristic Values Min. Typ. 100 3.0 ± ...
... dI/dt = 100 A/µ Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... D S Fig Nor m alize DS(on) V alue vs . Drain Curr e nt 2.4 2.2 2 1.8 1 10V GS 1 15V - - - - GS 1.2 1 0.8 0 100 150 200 mperes D © 2006 IXYS All rights reserved C 350 300 250 8V 200 150 7V 100 1.2 1.4 1.6 C 2.4 2 1.8 1.6 7V 1 ...
... Source -To-Drain V oltage 350 300 250 200 150 100 º 150 0.4 0.6 0 olts S D Fig. 11. Capacitance 100,000 f = 1MH z 10,000 1,000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 7 º 1.2 1.4 1 ...
... Fig. 13. Maximum Transient Thermal Resistance 1.000 0.100 0.010 0.001 0.00001 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 Pulse Width - Seconds IXTR 200N10P 0 IXYS REF: T_200N10P (88) 03-22-06-E.xls ...
Related keywords
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