IXTH60N20L2 IXYS, IXTH60N20L2 Datasheet

no-image

IXTH60N20L2

Manufacturer Part Number
IXTH60N20L2
Description
MOSFET N-CH 200V 60A TO-247
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTH60N20L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
255nC @ 10V
Input Capacitance (ciss) @ Vds
10500pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
10500
Qg, Typ, (nc)
255
Trr, Typ, (ns)
330
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Linear L2
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247&TO-3P)
TO-268
TO-3P
TO-247
Test Conditions
V
V
V
V
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 10V, I
= 0V, I
= V
= ± 20V, V
= V
GS
DSS
Power
, I
, V
D
D
D
= 1mA
= 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1M
Advance Technical Information
T
Ω
J
= 125°C
JM
IXTQ60N20L2
IXTH60N20L2
IXTT60N20L2
-55 to +150
-55 to +150
Characteristic Values
Min.
200
2.5
1.13/10
Maximum Ratings
+150
± 20
± 30
540
300
260
200
200
150
4.0
5.5
6.0
60
60
2
Typ.
±100 nA
Nm/lb.in.
Max.
4.5
50 μA
45 mΩ
5 μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
V
g
g
g
J
V
I
R
TO-268 (IXTT)
TO-3P (IXTQ)
TO-247(IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Guaranteed FBSOA at 75°C
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
G
S
D
≤ ≤ ≤ ≤ ≤ 45mΩ Ω Ω Ω Ω
= 200V
= 60A
S
G
Tab = Drain
D
S
= Drain
Tab
Tab
Tab
DS100203(10/09)

Related parts for IXTH60N20L2

IXTH60N20L2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Maximum Ratings 200 Ω 200 GS ± 20 ± 150 540 -55 to +150 +150 -55 to +150 300 260 1.13/10 4.0 5.5 6.0 Characteristic Values Min ...

Page 2

... C Characteristic Values Min. Typ. JM 330 25.0 4.13 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 TO-3P (IXTQ) Outline Max 0.23 °C/W °C/W Max. W Max. TO-247 (IXTH) Outline 60 A 240 A 1.4 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade C IXTH60N20L2 = 25º 30A Value vs 60A 30A D 75 100 125 150 75 100 125 150 ...

Page 4

... IXTT60N20L2 IXTQ60N20L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 100V 30A 10mA 100 150 200 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTH60N20L2 40ºC J 25ºC 125ºC 100 120 140 250 300 350 400 0 ...

Page 5

... 25ºC C Single Pulse 25µs 100 100µs 1ms 10 10ms 100ms DC 1 100 1,000 1 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º DS(on) Limit 25µs 100µs 1ms 10ms 100ms DC 10 100 V - Volts DS IXYS REF: T_60N20L2(8R)09-29- 150ºC ...

Related keywords