IXFH13N90 IXYS, IXFH13N90 Datasheet
IXFH13N90
Manufacturer Part Number
IXFH13N90
Description
MOSFET N-CH 900V 13A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH13N90.pdf
(4 pages)
Specifications of IXFH13N90
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.8
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
123
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH13N90
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH13N90
Manufacturer:
IXYS
Quantity:
18 000
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
GSM
AR
J
stg
DSS
DGR
GS
D
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
rr
TM
, di/dt 100 A/ s, V
GS
, HDMOS
DSS
, I
D
D
DC
D
= 3 mA
= 4 mA
, V
G
= 0.5 • I
300 s, duty cycle d
= 2
DS
= 0
TM
D25
GS
Family
JM
= 1 M
DD
T
T
(T
J
J
= 25 C
= 125 C
J
V
10N90
12N90
13N90
= 25 C, unless otherwise specified)
DSS
,
2 %
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH/IXFT 13 N90
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
min.
900
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
900
900
300
150
300
20
30
10
12
13
40
48
52
10
12
13
30
5
max.
100
4.5
1.1
0.9
0.8
25
1
V/ns
mJ
mA
nA
W
V
V
V
V
A
A
A
A
A
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXFH)
TO-204 AA (IXFM)
Features
Applications
Advantages
TO-268 (IXFT)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
900 V
900 V
900 V
t
rr
V
G = Gate,
S = Source,
DSS
DS (on)
250 ns
G
HDMOS
E
10 A
12 A
13 A
I
D25
D
D = Drain,
TAB = Drain
TM
DS91530I(01/03)
process
G
R
1.1
0.9
0.8
DS(on)
C (TAB)
(TAB)
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IXFH13N90 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 Family Maximum Ratings 900 = 1 M 900 10N90 10 12N90 12 13N90 13 10N90 40 12N90 48 JM 13N90 52 10N90 10 12N90 12 13N90 13 30 ...
Page 2
... 100 TO-268 (IXFT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 10N90 IXFM 10N90 Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test ...
Page 3
... V = 15V GS 1.0 0 Amperes D Fig. 5. Drain Current vs. Case Temperature 12N90 12 10 10N90 -50 - Degrees C C © 2003 IXYS All rights reserved IXFH 10N90 IXFM 10N90 Fig. 2. Input Admittance 10V Fig. 4. Temperature Dependence 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0. -50 Fig. 6. Temperature Dependence of 1 ...
Page 4
... D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 10N90 IXFM 10N90 100 125 150 ...