IXTC75N10 IXYS, IXTC75N10 Datasheet - Page 2

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IXTC75N10

Manufacturer Part Number
IXTC75N10
Description
MOSFET N-CH 100V 72A ISOPLUS220
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTC75N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 37.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
300
Pd, (w)
230
Rthjc, Max, (k/w)
0.54
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Note: 1. I
of the following U.S. patents:
d(on)
d(off)
f
S
SM
r
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gd
gs
T
= 37.5A
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
F
GS
DS
= I
= I
= 0 V
S
S
= 10 V; I
V
V
R
V
, V
, -di/dt = 100 A/µs, V
GS
GS
GS
G
= 2 Ω, (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= I
T
DS
, pulse test
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
R
= 100 V
DSS
DSS
(T
(T
, I
, I
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
J
J
D
D
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
JM
= I
= I
T
T
min.
min.
25
Characteristic Values
Characteristic Values
4500
1300
0.30
typ.
typ.
300
550
100 140
180 260
30
40
60 110
30
30
90 160
0.54
max.
max.
1.75
60
60
70
300
75
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
ISOPLUS220 Outline
IXTC 75N10
6,534,343

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