STW45NM50 STMicroelectronics, STW45NM50 Datasheet
STW45NM50
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STW45NM50 Summary of contents
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... Table 1. Device summary Order code STW45NM50 July 2009 J MDmesh™ Power MOSFET R DS(on max < 0.1 Ω Figure 1. Marking Package W45NM50 Doc ID 8477 Rev 5 STW45NM50 max, 0.08 Ω TO-247 TO-247 Internal schematic diagram Packaging TO-247 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 8477 Rev 5 STW45NM50 ...
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... STW45NM50 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature J T Storage temperature stg 1. Pulse width limited by safe operating area ≤ ...
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... Parameter Test conditions V >I DS D(on 22 =25 V, f=1 MHz = 400 = Figure 14 f=1 MHz Gate DC Bias= 0 test signal level = 20 mV open drain DSS Doc ID 8477 Rev 5 STW45NM50 Min. Typ 500 GS = 250 µ 22.5 A 0.08 D Min. Typ DS(on)max - 20 3700 =0 - 610 400 V - 325 = 1.7 oss Max ...
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... STW45NM50 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 8477 Rev 5 STW45NM50 ...
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... STW45NM50 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Doc ID 8477 Rev 5 Electrical characteristics 7/12 ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 8477 Rev 5 STW45NM50 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STW45NM50 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 8477 Rev 5 Package mechanical data ® 9/12 ...
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... Package mechanical data Dim ø P ø 10/12 TO-247 Mechanical data mm. Min. Typ Doc ID 8477 Rev 5 STW45NM50 Max ...
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... STW45NM50 5 Revision history Table 9. Document revision history Date 30-Mar-2005 23-Jul-2009 Revision Source drain diode 4 Modified value on Switching times 5 Modified values on Doc ID 8477 Rev 5 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 8477 Rev 5 STW45NM50 ...