IXTH90P10P IXYS, IXTH90P10P Datasheet - Page 4

• Manufacturer Part Number: IXTH90P10P
• Description: MOSFET P-CH 100V 90A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH90P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 462W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -100.0
• Id(cont), Tc=25°c, (a): -90.0
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 5800
• Qg, Typ, (nc): 120
• Trr, Typ, (ns): 144
• Pd, (w): 462
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
-100
-240
-220
-200
-180
-160
-140
-120
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
100
-80
-60
-40
-20
0
0
-3.5
-0.5
0
f
= 1 MHz
-4.0
-5
-1.0
Fig. 9. Forward Voltage Drop of
-4.5
-10
Fig. 7. Input Admittance
-1.5
Fig. 11. Capacitance
-5.0
-15
Intrinsic Diode
T
V
-2.0
V
J
V
GS
DS
= 125ºC
SD
-5.5
- Volts
-20
- Volts
- Volts
-2.5
-6.0
T
-25
J
= - 40ºC
125ºC
-3.0
25ºC
T
C oss
C rss
-6.5
C iss
-30
J
= 25ºC
-3.5
-7.0
-35
-7.5
-4.0
-40
-
1,000
-
100
-10
-
60
55
50
45
40
35
30
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
10
-
5
0
0
1
-
0
0
1
Fig. 12. Forward-Bias Safe Operating Area
R
-10
V
I
I
10
D
G
DS(on)
T
T
Single Pulse
DS
J
C
= - 45A
= -1mA
= 150ºC
= 25ºC
= - 50V
20
-20
Limit
Fig. 8. Transconductance
30
-30
Fig. 10. Gate Charge
40
Q
100ms
-40
G
- NanoCoulombs
I
50
D
V
-50
- Amperes
DS
10ms
DC
-
60
10
- Volts
-60
70
-70
1ms
IXTH90P10P
IXTT90P10P
80
-80
T
90
J
125ºC
= - 40ºC
-90
IXYS REF: T_90P10P(B7) 5-13-08
25ºC
100
100µs
-100
110 120
-
-110
100