IXFT30N40Q IXYS, IXFT30N40Q Datasheet
IXFT30N40Q
Manufacturer Part Number
IXFT30N40Q
Description
MOSFET N-CH 400V 30A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH30N40Q.pdf
(2 pages)
Specifications of IXFT30N40Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
400
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3300
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q-Class
© 2000 IXYS All rights reserved
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£
£
DM
TM
±
GS
DSS
°
°
°
°
°
°
°
°
D
D
DC
£
D
£
G
DS
°
°
g
m
m
W
D25
m
GS
DD
£
J
J
J
W
DSS
£
JM
°
°
°
±
±
±
°
°
°
°
m
W
V
I
R
t
D25
rr
DSS
DS(on)
£ 250 ns
l
l
l
l
l
l
l
l
l
DS (on)
=
=
= 0.16 W
G
400 V
S
30 A
g
98754 (10/00)
(TAB)
(TAB)
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IXFT30N40Q Summary of contents
Page 1
... J ° C ° C ° C ° C £ £ £ ° ° ± DSS D25 £ m © 2000 IXYS All rights reserved W GS ± ± £ DD DSS ° J ± ° J ° J £ 400 V DSS D25 = 0. DS(on) £ 250 ° ° ° ° ...
Page 2
... £ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: ° J D25 DSS D D25 DSS D D25 ° £ 4,835,592 4,850,072 IXFH 30N40Q IXFT 30N40Q Dim. Millimeter Min. Max. A 4.7 5.3 A 2.2 2. 2.2 2 1.0 1.4 b 1.65 2. 2.87 3. 20.80 21. ...