IXFH17N80Q IXYS, IXFH17N80Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH17N80Q
Manufacturer Part Number
IXFH17N80Q
Description
MOSFET N-CH 800V 17A TO-247
Specifications of IXFH17N80Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
17
Rds(on), Max, Tj=25°c, (?)
0.60
Ciss, Typ, (pf)
4300
Qg, Typ, (nc)
88
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 3 mA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
GS
TO-247
TO-268
= 1 MΩ
DD
T
T
≤ V
J
J
= 125°C
g
= 25°C
DSS
,
JM
800
Min. Typ.
2.0
IXFH 17N80Q
IXFT 17N80Q
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
800
800
±20
±30
400
150
300
1.0
17
68
17
30
6
4
5
±100
0.60
Max.
4.5
25
1
V/ns
mA
mJ
°C
°C
°C
°C
nA
µA
W
Ω
A
A
A
V
V
V
V
g
g
V
V
J
TO-268 (D3) (IXFT) Case Style
TO-247 AD (IXFH)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
G
D = Drain
TAB = Drain
S
=
=
= 0.60 Ω Ω Ω Ω Ω
DS99058A(06/03)
g
process
800 V
17 A
(TAB)
(TAB)
Related parts for IXFH17N80Q
IXFH17N80Q Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 17N80Q IXFT 17N80Q g Maximum Ratings 800 = 1 MΩ 800 GS ±20 ± 1.0 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 1 ...
... -di/dt = 100 A/µ Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. , pulse test 9 17 ...
... Volts D S Fig Norm alized to I DS(on) Value vs 10V GS 2 125ºC J 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 35 = 10V 3.1 2 2.5 2.2 1.9 1.6 1.3 0.7 0 D25 25º IXFH 17N80Q IXFT 17N80Q Fig. 2. Extended Output Characteristics @ 25 deg ...
... 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25º 0.9 1 1.1 1 ...
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